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FDP24AN06LA0 Real Image1 FDP24AN06LA0 Real Image2
Same model may have multiple batches, images only for reference.
FDP24AN06LA0 Real Image1 FDP24AN06LA0 Real Image2
FDP24AN06LA0 Real Image1 FDP24AN06LA0 Real Image2
Same model may have multiple batches, images only for reference.

FDP24AN06LA0

Part No FDP24AN06LA0
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel PowerTrench MOSFET 60V, 36A, 24mohm
Datasheet
FDP24AN06LA0 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Series PowerTrench
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 60V
Current - Continuous Drain (Id) @ 25°C 7.8A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Vgs(th) (Maximum) @ Id 3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 21nC @ 5V
Input Capacitance (Ciss) (Maximum) @ Vds 1850pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 75W (Tc)
Rds On (Maximum) @ Id, Vgs 19 mOhm @ 40A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220-3
Package TO-220-3
Win Source Part Number 1173873-FDP24AN06LA0
Manufacturer Homepage www.fairchildsemi.com
Family Name FDP24AN06LA0
Introduction Date January 27, 2004
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FDP24AN06LA0 CAD Model

Description

The FDP24AN06LA0 is a N-channel MOSFET from the PowerTrench series manufactured by Fairchild/ON Semiconductor.

  • Maximum power dissipation: 75W (Tc)
  • Drain-source voltage: 60V
  • Continuous drain current: 7.8A (Ta) and 40A (Tc)
  • Gate-source threshold voltage: 3V @ 250μA
  • Gate charge: 21nC @ 5V
  • Input capacitance: 1850pF @ 25V
  • Rds on: 19 mOhm @ 40A, 10V
  • The FDP24AN06LA0 is packaged in a TO-220-3 case and is mounted through hole.
  • It is categorized as a discrete semiconductor product and has a popularity of medium.

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