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Same model may have multiple batches, images only for reference.
FDP2570 Real Image
Same model may have multiple batches, images only for reference.

FDP2570

Part No FDP2570
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 22A TO-220AB
Datasheet
FDP2570 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 22A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 56nC @ 10V
Max Input Capacitance 1911pF @ 75V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 93W (Tc)
Maximum Rds On at Id,Vgs 80 mOhm @ 11A, 10V
Temperature Range - Operating -65°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 1038317-FDP2570
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FDP2570 CAD Model

Description

The FDP2570 MOSFET is a high-performance N-channel transistor designed for use in a wide range of applications, including power supplies, motor control, and lighting manufactured by Fairchild/ON Semiconductor.

  • Power Dissipation (Max): 93W
  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current: 22A @ 25°C
  • Package: TO-220-3
  • Mounting: Through Hole

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