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Same model may have multiple batches, images only for reference.
FDP2710_F085 Real Image
Same model may have multiple batches, images only for reference.

FDP2710_F085

Part No FDP2710_F085
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 4A TO-220
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 101nC @ 10V
Max Input Capacitance 5690pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 403W (Tc)
Maximum Rds On at Id,Vgs 47 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 1038320-FDP2710_F085
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FDP2710_F085 CAD Model

Description

The FDP2710_F085 is an N-channel MOSFET transistor with a drain-source breakdown voltage of 250V and a continuous drain current of 4A @ 25°C manufactured by Fairchild/ON Semiconductor.

  • Maximum Rds On: 47 mOhm @ 50A and 10V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Gate Charge: 101nC @ 10V
  • Package: TO-220-3
  • Suitable For: Discrete semiconductor products

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