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Same model may have multiple batches, images only for reference.
FDP8441_F085 Real Image
Same model may have multiple batches, images only for reference.

FDP8441_F085

Part No FDP8441_F085
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 80A TO-220AB
Datasheet
FDP8441_F085 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 23A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 280nC @ 10V
Max Input Capacitance 15000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 2.7 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1038334-FDP8441_F085
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FDP8441_F085 CAD Model

Description

The FDP8441_F085 MOSFET is a N-Channel power MOSFET that has a drain-source breakdown voltage of 40V manufactured by Fairchild/ON Semiconductor.

  • Continuous Drain Current: 23A @ 25°C (Ta)
  • Power Dissipation (Max): 300W (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On: 2.7 mOhm @ 80A, 10V
  • Package: TO-220AB case
  • Mounting: Through hole
  • Supply and Demand: Sufficient

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