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Same model may have multiple batches, images only for reference.
FDPF14N30T Real Image
Same model may have multiple batches, images only for reference.

FDPF14N30T

Part No FDPF14N30T
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 300V 14A TO-220F
Datasheet
FDPF14N30T Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 300V
Continuous Drain Current at 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 1060pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 290 mOhm @ 7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220F
Dimension TO-220-3 Full Pack
Win Source Part Number 1038350-FDPF14N30T
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDPF14N30T CAD Model

Description

The Fairchild/ON Semiconductor FDPF14N30T is a N-Channel MOSFET transistor designed for high power applications.

  • Maximum Power Dissipation: 35W
  • Drain-Source Breakdown Voltage: 300V
  • Continuous Drain Current: 14A @ 25°C
  • Maximum Rds On: 290 mOhm @ 7A, 10V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Max Gate Charge: 25nC @ 10V
  • Lifecycle Status: Obsolete (EOL)
  • Package: TO-220F
  • Temperature Range: -55°C to 150°C

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