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Same model may have multiple batches, images only for reference.
FDPF15N65YDTU Real Image
Same model may have multiple batches, images only for reference.

FDPF15N65YDTU

Part No FDPF15N65YDTU
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 15A TO-220F
Datasheet
FDPF15N65YDTU Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 63nC @ 10V
Max Input Capacitance 3095pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 38.5W (Tc)
Maximum Rds On at Id,Vgs 440 mOhm @ 7.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220F-3 (Y-Forming)
Dimension TO-220-3 Full Pack, Formed Leads
Win Source Part Number 1038351-FDPF15N65YDTU
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FDPF15N65YDTU CAD Model

Description

The Fairchild/ON Semiconductor FDPF15N65YDTU is an N-channel MOSFET transistor with a drain-source breakdown voltage of 650V and a continuous drain current of 15A at 25°C.

  • Manufacturer: Fairchild/ON Semiconductor
  • Product Name: FDPF15N65YDTU
  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current: 15A @ 25°C
  • Package: TO-220F-3 (Y-Forming)
  • Mounting Type: Through Hole
  • Maximum Power Dissipation: 38.5W (Tc)
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 440 mOhm @ 7.5A, 10V
  • Category: Discrete Semiconductor Product
  • Status: Obsolete(EOL)

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