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Same model may have multiple batches, images only for reference.
FDPF3860TYDTU Real Image
Same model may have multiple batches, images only for reference.

FDPF3860TYDTU

Part No FDPF3860TYDTU
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 20A TO-220F
Datasheet
FDPF3860TYDTU Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 35nC @ 10V
Max Input Capacitance 1800pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 33.8W (Tc)
Maximum Rds On at Id,Vgs 38.2 mOhm @ 5.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220F-3 (Y-Forming)
Dimension TO-220-3 Full Pack, Formed Leads
Win Source Part Number 204125-FDPF3860TYDTU
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDPF3860TYDTU CAD Model

Description

The Fairchild/ON Semiconductor MOSFET is a high-performance N-Channel device.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 20A (Tc) @ 25°C
  • Maximum Power Dissipation: 33.8W (Tc)
  • Package: TO-220F-3 (Y-Forming)
  • Operating Temperature: -55°C to 150°C (TJ)
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Rds On: 38.2 mOhm @ 5.9A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 1800pF @ 25V

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.4449 $57.7960
100+ $1.1862 $118.6200
155+ $1.1492 $178.1260
210+ $1.1123 $233.5830
270+ $1.0753 $290.3310
360+ $0.9633 $346.7880
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Availability: 4,800 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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