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Same model may have multiple batches, images only for reference.
FDR8702H
Same model may have multiple batches, images only for reference.

FDR8702H

Part No FDR8702H
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V SSOT-8
Datasheet
FDR8702H Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.6A, 2.6A
Maximum Rds On at Id,Vgs 38 mOhm @ 3.6A, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 10nC @ 4.5V
Max Input Capacitance 650pF @ 10V
Maximum Power Dissipation 800mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SuperSOT-8
Win Source Part Number 067070-FDR8702H
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDR8702H CAD Model

Description

The Fairchild/ON Semiconductor 067070-FDR8702H is an N and P-channel type FET with logic level gate feature. The product is designed for discrete semiconductor products.

  • Power Dissipation (Max): 800mW
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 3.6A, 2.6A @ 25°C
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Gate Charge (Max): 10nC @ 4.5V
  • Input Capacitance (Max): 650pF @ 10V
  • Rds On (Max): 38 mOhm @ 3.6A, 4.5V
  • Status: Obsolete (EOL)
  • Popularity: Medium

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