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FDS6162N7

Part No FDS6162N7
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 23A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 23A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 73nC @ 4.5V
Max Input Capacitance 5521pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 3W (Ta)
Maximum Rds On at Id,Vgs 3.5 mOhm @ 23A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1038387-FDS6162N7
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDS6162N7 CAD Model

Description

The Fairchild/ON Semiconductor FDS6162N7 is a N-channel MOSFET designed for use in discrete semiconductor products.

  • Manufacturer: Fairchild/ON Semiconductor
  • Product Name: FDS6162N7
  • Channel Type: N-Channel
  • Maximum Power Dissipation: 3W (Ta)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 23A @ 25°C
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Maximum Gate Charge: 73nC @ 4.5V
  • Maximum Input Capacitance: 5521pF @ 10V
  • Package: 8-SO
  • Operating Temperature: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8099 $63.3465
80+ $1.4851 $118.8080
125+ $1.4387 $179.8375
170+ $1.3922 $236.6740
215+ $1.3460 $289.3900
290+ $1.2067 $349.9430
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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