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FDS6575_NL

Part No FDS6575_NL
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 008, Plastic Molded, SOIC-8 Pkg, Narrow Body, SMD (S1)<AZ
Sample
Rohs State rohs
ECAD Module
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RoHS Compliant
Win Source Part Number 965403-FDS6575_NL
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Fairchild/ON Semiconductor
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian FDS6575_NL CAD Model

Description

The FDS6575_NL is an N-Channel PowerTrench® MOSFET from Fairchild Semiconductor (now ON Semiconductor). It is designed for battery management and load switching applications. This MOSFET offers a low on-resistance (RDS(on)) and fast switching speed, contributing to efficient power management in portable devices.

Applications

  • Battery management in mobile devices (smartphones, tablets)
  • Load switching
  • DC-DC conversion
  • Power management circuits
  • Portable equipment

Features

  • Low RDS(on): Reduces power loss and improves efficiency.
  • Fast switching speed: Enables efficient operation in high-frequency circuits.
  • Logic level gate drive: Allows direct drive from logic circuits.
  • Small outline package: Minimizes board space requirements.
  • RoHS compliant: Meets environmental regulations.

Benefits

  • Improved battery life: Low RDS(on) minimizes power dissipation, extending battery runtime in portable devices.
  • Reduced component count: Logic level gate drive simplifies circuit design.
  • Increased power density: Small outline package allows for more compact designs.
  • Enhanced system performance: Fast switching speed enables efficient operation in demanding applications.

Additional Details

The FDS6575_NL features a drain-source voltage (VDS) of 30V, a gate-source voltage (VGS) of ±20V, and a continuous drain current (ID) of up to 7.5A. The typical RDS(on) is 0.028 Ohms at VGS = 10V. It is available in a PowerTrench® small outline package. The device is designed to minimize conduction losses and switching losses, making it suitable for high-efficiency power conversion applications. It is also designed to withstand electrostatic discharge (ESD) events.

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