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FDS6910 Real Image FDS6910 Real Image1 FDS6910 Real Image2 FDS6910 Real Image3 FDS6910 Real Image4 FDS6910 Real Image5
Same model may have multiple batches, images only for reference.
FDS6910 Real Image FDS6910 Real Image1 FDS6910 Real Image2 FDS6910 Real Image3 FDS6910 Real Image4 FDS6910 Real Image5
FDS6910 Real Image FDS6910 Real Image1 FDS6910 Real Image2 FDS6910 Real Image3 FDS6910 Real Image4 FDS6910 Real Image5
Same model may have multiple batches, images only for reference.

FDS6910

Part No FDS6910
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 7.5A 8SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 7.5A
Maximum Rds On at Id,Vgs 13 mOhm @ 7.5A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 24nC @ 10V
Max Input Capacitance 1130pF @ 15V
Maximum Power Dissipation 900mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 016177-FDS6910
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FDS6910 CAD Model

Description

The Fairchild/ON Semiconductor 016177-FDS6910 is a dual N-channel logic level gate FET designed for industrial and power management applications.

  • Package: 8-SO
  • Mounting: SMD (SMT)
  • Maximum Power Dissipation: 900mW
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 7.5A @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Max Gate Charge: 24nC @ 10V
  • Max Input Capacitance: 1130pF @ 15V
  • Max Rds On: 13 mOhm @ 7.5A, 10V
  • Quantity per Package: 2500

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