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Same model may have multiple batches, images only for reference.
FDS8984_F085 Real Image
Same model may have multiple batches, images only for reference.

FDS8984_F085

Part No FDS8984_F085
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 7A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 7A
Maximum Rds On at Id,Vgs 23 mOhm @ 7A, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 635pF @ 15V
Maximum Power Dissipation 1.6W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1038438-FDS8984_F085
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDS8984_F085 CAD Model

Description

The FDS8984_F085 is a 2 N-Channel Dual FET manufactured by Fairchild/ON Semiconductor.

  • Manufacturer: Fairchild/ON Semiconductor
  • FET Type: 2 N-Channel Dual FET
  • Gate Feature: Logic Level Gate
  • Mounting Type: SMD (SMT)
  • Packaging: Reel - TR
  • Maximum Power Dissipation: 1.6W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 7A @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 13nC @ 10V
  • Maximum Input Capacitance: 635pF @ 15V
  • Maximum Rds on @ Id,Vgs: 23 mOhm @ 7A, 10V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Popularity: Medium

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