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FDS9945

Part No FDS9945
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 60V 3.5A 8-SO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 3.5A
Maximum Rds On at Id,Vgs 100 mOhm @ 3.5A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 13nC @ 5V
Max Input Capacitance 420pF @ 30V
Maximum Power Dissipation 1W
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 016212-FDS9945
Family Name FDS9945
Introduction Date February 09, 2001
ECCN EAR99
Country of Origin China, Israel
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FDS9945 CAD Model

Description

The FDS9945 is a dual N-channel logic level gate FET transistor designed for use in various applications such as voltage regulation, switching, and amplification.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 3.5A @ 25°C
  • Package: 8-SO
  • Compatible with surface mount technology.
  • Maximum Power Dissipation: 1W
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Popularity: High
  • Supply and Demand Status: Sufficient
  • Package: Reel of 2,500 pieces
  • Compliant with halogen-free standards.

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Pricing & Ordering

Quantity Unit Price Ext. Price
165+ $0.3089 $50.9685
350+ $0.2894 $101.2900
540+ $0.2796 $150.9840
770+ $0.2600 $200.2000
1,000+ $0.2503 $250.3000
1,250+ $0.2405 $300.6250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 116,070 pieces
MOQ: 165 pcs
Order Increment : 1 pcs
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