The Fairchild/ON Semiconductor FDT1600N10ALZ is an N-channel MOSFET transistor with a drain-source breakdown voltage of 100V and a continuous drain current of 5.6A (Tc).

• Power Dissipation (Max): 10.42W (Tc)
• Maximum Rds On @ Id,Vgs: 160 mOhm @ 2.8A, 10V
• Maximum Gate-Source Voltage: ±20V
• Gate-Source Threshold Voltage: 2.8V @ 250μA
• Maximum Gate Charge: 3.77nC @ 10V
• Maximum Input Capacitance: 225pF @ 50V
• Package: SOT-223-4
• Operating Temperature Range: -55°C to 150°C (TJ)
• Supply and Demand Status: Sufficient
• Packaging: Reel of 4k pcs