The FDT3612 is an N-channel MOSFET with a drain-source breakdown voltage of 100V and a continuous drain current of 3.7A (Ta). It has a maximum power dissipation of 3W (Ta) and a gate-source threshold voltage of 4V @ 250μA. The FDT3612 is packaged in an SOT-223-4 package and is mounted in an SMD (SMT) format. The max gate charge is 20nC @ 10V and the max input capacitance is 632pF @ 50V. The maximum Rds On at Id, Vgs is 120 mOhm @ 3.7A, 10V. This discrete semiconductor product is a part of the Discrete Semiconductor Products category and is active.