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Same model may have multiple batches, images only for reference.
FDW2510NZ Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FDW2510NZ

Part No FDW2510NZ
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 6.4A 8TSSOP
Datasheet
FDW2510NZ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 6.4A
Maximum Rds On at Id,Vgs 24 mOhm @ 6.4A, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 12nC @ 4.5V
Max Input Capacitance 870pF @ 10V
Maximum Power Dissipation 1.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Win Source Part Number 1038491-FDW2510NZ
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDW2510NZ CAD Model

Description

The Fairchild/ON Semiconductor FDW2510NZ is a dual N-channel logic level gate FET, which is an obsolete product.

  • Type: Dual N-channel Logic Level Gate FET
  • Status: Obsolete
  • Power Dissipation: 1.1W
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 6.4A @ 25°C
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Maximum Gate Charge: 12nC @ 4.5V
  • Maximum Input Capacitance: 870pF @ 10V
  • Maximum Rds On: 24 mOhm @ 6.4A, 4.5V
  • Package: 8-TSSOP
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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