The Fairchild/ON Semiconductor 2 N-Channel (Dual) FET with logic level gate is an obsolete (EOL) product with a maximum power dissipation of 446mW and a drain-source breakdown voltage of 20V.

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Power Dissipation - Max: 446mW
• Voltage - Drain Source Breakdown (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 200mA
• Vgs(th) (Max) @ Id: 1.5V @ 250μA
• Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
• Rds On (Max) @ Id,Vgs: 5 Ohm @ 200mA, 4.5V
• Mounting Type: SMD (SMT)
• Packaging: Reel - TR
• Temperature Range: -55°C to 150°C (TJ)
• Package: SC-89-6
• Lifecycle Status: Obsolete (EOL)