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Same model may have multiple batches, images only for reference.
BCR198E6393HTSA1 Real Image
Same model may have multiple batches, images only for reference.

BCR198E6393HTSA1

Part No BCR198E6393HTSA1
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP SOT23
Datasheet
BCR198E6393HTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 70 @ 5mA, 5V
Max Vce (sat) 300mV @ 500μA, 10mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 190MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Win Source Part Number 1022714-BCR198E6393HTSA1
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Automotive, Computers & Computer Peripherals, Communications & Networking, Consumer Electronics, Lighting, Sensing & Instrumentation, Industrial
Ultra Librarian 3D Model Ultra Librarian BCR198E6393HTSA1 CAD Model

Description

This BCR198E6393HTSA1 transistor is a PNP pre-biased transistor from Infineon Technologies that has a maximum collector-emitter breakdown voltage of 50V.

  • Maximum Current Collector: 100mA
  • Collector Cut-off Current: 100nA
  • Frequency: 190MHz
  • Typical Gain: 70 @ 5mA and 5V
  • Maximum Power Dissipation: 200mW
  • Popularity: Medium
  • Applications: Automotive, Computers and Computer Peripherals, Communications and Networking, Consumer Electronics, Lighting, Sensing and Instrumentation, and Industrial

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