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Same model may have multiple batches, images only for reference.
FDZ294N Real Image
Same model may have multiple batches, images only for reference.

FDZ294N

Part No FDZ294N
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 6A 9-BGA
Datasheet
FDZ294N Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 10nC @ 4.5V
Max Input Capacitance 670pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.7W (Ta)
Maximum Rds On at Id,Vgs 23 mOhm @ 6A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 9-BGA (1.5x1.6)
Dimension 9-VFBGA
Win Source Part Number 113911-FDZ294N
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FDZ294N CAD Model

Description

The FDZ294N is a MOSFET transistor manufactured by Fairchild/ON Semiconductor.

  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 20V
  • Maximum Continuous Drain Current: 6A @ 25°C
  • Maximum Gate-Source Voltage: ±12V
  • Maximum Rds On: 23 mOhm @ 6A, 4.5V
  • Package: 9-BGA (1.5x1.6)
  • Maximum Power Dissipation: 1.7W (Ta)
  • Popularity: Medium
  • Status: Obsolete (EOL)
  • Supply/Demand: Limited

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