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Same model may have multiple batches, images only for reference.
FGH40T65SPD-F085 Real Image
Same model may have multiple batches, images only for reference.

FGH40T65SPD-F085

Part No FGH40T65SPD-F085
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTO  /  IGBT NPT 650 V 80 A 267 W Through Hole TO-247
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Fairchild Semiconductor
Series Automotive, AEC-Q101
Package Bulk
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 80 A
Current - Collector Pulsed (Icm) 120 A
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 40A
Power - Max 267 W
Switching Energy 1.16mJ (on), 270µJ (off)
Input Type Standard
Gate Charge 36 nC
Td (on/off) @ 25°C 18ns/35ns
Test Condition 400V, 40A, 6Ohm, 15V
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247
ECCN EAR99
HTSUS 8542.39.0001
Other Names ONSFSCFGH40T65SPD-F085,2156-FGH40T65SPD-F085
Standard Package 1
Win Source Part Number 1167514-FGH40T65SPD-F085
Ultra Librarian 3D Model Ultra Librarian FGH40T65SPD-F085 CAD Model

Description

The Fairchild/ON Semiconductor FGH40T65SPD-F085 is an NPT IGBT designed for use in Single Transistors. It is part of the Automotive, AEC-Q101 series and is packaged in a TO-247-3 case. With a maximum power of 267W, it has a voltage collector emitter breakdown (Max) of 650V, a current collector (Ic) (Max) of 80A, and a current collector pulsed (Icm) of 120A. This IGBT has a Vce(on) (Max) @ Vge, Ic of 2.4V @ 15V, 40A, a switching energy of 1.16mJ (on), 270μJ (off), and a gate charge of 36 nC.

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