The FJB102 is a PNP epitaxial planar transistor from Fairchild Semiconductor (now ON Semiconductor), designed for switching and amplifier applications. This transistor offers good performance characteristics in a small package.

Applications

• Switching circuits
• Amplifier circuits
• General purpose amplification
• Driver stages
• Load switches

Features

• Low Collector-Emitter Saturation Voltage: Reduces power dissipation in switching applications.
• High Current Gain: Provides good amplification characteristics.
• Small Signal Amplifier
• Epitaxial Planar Die Construction
• Lead Free Finish/RoHS Compliant

Benefits

• Efficient Switching: Low saturation voltage contributes to efficient switching performance.
• Good Amplification: High current gain allows for good signal amplification.
• Compact Design: Small package size allows for compact circuit designs.
• Versatile Application: Suitable for a wide range of switching and amplifier applications.
• Environmentally friendly: Lead Free and RoHS compliant.

Additional Details

The FJB102 has a collector-emitter voltage (Vceo) of -50V and a collector current (Ic) of -0.1A. It features a collector-base voltage (Vcbo) of -50V and an emitter-base voltage (Vebo) of -5V. The DC current gain (hFE) is typically between 85 and 170. The device is typically packaged in a SOT-23 package. It is designed for both switching and amplifier applications and is a commonly used general-purpose transistor.