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FJI5603DTU

Part No FJI5603DTU
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors (BJT) - Single
Description Trans GP BJT NPN 800V 3A 100000mW 3-Pin(3+Tab) I2PAK Tube / TRANS NPN 800V 3A I2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Transistor Polarity NPN
Maximum Current Collector 3A
VCEO Maximum Collector-Emitter Breakdown Voltage 800V
Max Vce (sat) 2.5V @ 200mA, 1A
Collector Cut-off Current(Max) 100μA
Typical Gain (hFE) (Min) 20 @ 400mA, 3V
Maximum Power Dissipation 100W
Frequency - Transition 5MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package I2PAK
Win Source Part Number 067224-FJI5603DTU
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Quantity per package 1k pcs
Family Name FJI5603D
Introduction Date November 30, 2005
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian FJI5603DTU CAD Model

Description

The Fairchild/ON Semiconductor FJI5603DTU is an active NPN transistor.

  • Maximum Collector-Emitter Breakdown Voltage: 800V
  • Maximum Current Collector: 3A
  • Maximum Power Dissipation: 100W
  • Operating Temperature: 150°C
  • Mounting Type: Through-hole
  • Application: Discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9021 $58.6365
160+ $0.7404 $118.4640
245+ $0.7173 $175.7385
335+ $0.6942 $232.5570
435+ $0.6711 $291.9285
580+ $0.6018 $349.0440
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,850 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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