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Same model may have multiple batches, images only for reference.
FJY3010R Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FJY3010R

Part No FJY3010R
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 200MW SOT523F
Datasheet
FJY3010R Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Resistor - Base (R1) (Ohms) 10k
Typical Gain (hFE) (Min) 100 @ 1mA, 5V
Max Vce (sat) 300mV @ 1mA, 10mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 250MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package SOT-523F
Win Source Part Number 115175-FJY3010R
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FJY3010R CAD Model

Description

The FJY3010R is an NPN-prebiased transistor manufactured by Fairchild/ON Semiconductor.

  • Packaging: Reel-TR
  • Mounting: SMD (SMT)
  • Frequency-Transition: 250MHz
  • Resistor-Base (R1): 10k Ohms
  • Category: Discrete Semiconductor Products
  • Status: Obsolete (EOL)
  • Case/Package: SOT-523F
  • Maximum Current Collector: 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 40V
  • Max Vce (sat): 300mV @ 1mA, 10mA
  • Collector Cut-off Current (Max): 100nA (ICBO)
  • Typical Gain (hFE) (Min): 100 @ 1mA, 5V
  • Maximum Power Dissipation: 200mW
  • Supply and Demand: Sufficient

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