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Same model may have multiple batches, images only for reference.
FQA11N90C_F109 Real Image
Same model may have multiple batches, images only for reference.

FQA11N90C_F109

Part No FQA11N90C_F109
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 11A TO-3P
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 900V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 80nC @ 10V
Max Input Capacitance 3290pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 1.1 Ohm @ 5.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Dimension TO-3P-3, SC-65-3
Win Source Part Number 016413-FQA11N90C_F109
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQA11N90C_F109 CAD Model

Description

The Fairchild/ON Semiconductor FQA11N90C_F109 is an N-channel MOSFET with a maximum power dissipation of 300W. It has a medium popularity and a limited supply and demand status. The product is manufactured by Fairchild/ON Semiconductor and comes in a TO-3P package. It has a drain-source breakdown voltage of 900V and a continuous drain current of 11A. It can be used in various electronic devices.

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $3.6001 $61.2017
40+ $2.9545 $118.1800
61+ $2.8621 $174.5881
84+ $2.7697 $232.6548
108+ $2.6773 $289.1484
145+ $2.4001 $348.0145
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Availability: 25,000 pieces
MOQ: 17 pcs
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