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Same model may have multiple batches, images only for reference.
FQA12P20 Real Image
Same model may have multiple batches, images only for reference.

FQA12P20

Part No FQA12P20
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 200V 12.6A TO-3P
Datasheet
FQA12P20 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 12.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 1200pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 470 mOhm @ 6.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3PN
Dimension TO-3P-3, SC-65-3
Win Source Part Number 1039537-FQA12P20
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FQA12P20 CAD Model

Description

The MOSFET is a P-Channel technology based electronic component with a maximum power dissipation of 150W (Tc).

  • Technology: P-Channel
  • Maximum Power Dissipation: 150W (Tc)
  • Mounting Type: Through Hole
  • Packaging: Tube/Rail
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 12.6A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Rds On: 470 mOhm @ 6.3A, 10V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Input Capacitance: 1200pF @ 25V
  • Product Status: Obsolete(EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Dimension: TO-3P-3, SC-65-3

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0095 $60.5700
140+ $0.8281 $115.9340
220+ $0.8027 $176.5940
300+ $0.7762 $232.8600
385+ $0.7508 $289.0580
515+ $0.6734 $346.8010
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Availability: 26,000 pieces
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