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Same model may have multiple batches, images only for reference.
FQA17P10 Real Image
Same model may have multiple batches, images only for reference.

FQA17P10

Part No FQA17P10
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 100V P-Channel MOSFET
Datasheet
FQA17P10 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Series QFET
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type P
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 39nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1100pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 120W (Tc)
Rds On (Maximum) @ Id, Vgs 190 mOhm @ 9A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-3P
Package TO-3P-3, SC-65-3
Win Source Part Number 1175158-FQA17P10
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Family Name FQA17P10
Introduction Date August 27, 2002
ECCN EAR99
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian FQA17P10 CAD Model

Description

The FQA17P10 is a MOSFET transistor manufactured by Fairchild/ON Semiconductor.

  • Series: QFET
  • Package: TO-3P-3, SC-65-3
  • Continuous Drain Current: 18A @ 25°C
  • Maximum Power Dissipation: 120W @ Tc
  • Maximum Gate-Source Voltage: ±30V
  • Threshold Voltage: 4V @ 250μA
  • Maximum Input Capacitance: 1100pF @ 25V
  • Gate Charge: 39nC @ 10Vgs
  • Applications: High current switching, power supplies, motor control, and lighting systems

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