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Same model may have multiple batches, images only for reference.
FQA19N60 Real Image
Same model may have multiple batches, images only for reference.

FQA19N60

Part No FQA19N60
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 18.5A TO-3P
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 18.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 90nC @ 10V
Max Input Capacitance 3600pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 9.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3PN
Dimension TO-3P-3, SC-65-3
Win Source Part Number 204262-FQA19N60
Popularity Medium
Supply and Demand Status Limited
Quantity per package 450
Ultra Librarian 3D Model Ultra Librarian FQA19N60 CAD Model

Description

The FQA19N60 is a MOSFET device from Fairchild/ON Semiconductor.

  • Channel: N-channel
  • Mounting: Through-hole
  • Case: TO-3PN
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 18.5A (Tc)
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 380 mOhm @ 9.3A, 10V
  • Power Dissipation: 300W (Tc)
  • Category: Discrete Semiconductor Products

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $10.9090 $54.5450
12+ $8.9510 $107.4120
18+ $8.6713 $156.0834
24+ $8.3916 $201.3984
31+ $8.1119 $251.4689
42+ $7.2727 $305.4534
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