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Same model may have multiple batches, images only for reference.
FQA28N15_F109 Real Image
Same model may have multiple batches, images only for reference.

FQA28N15_F109

Part No FQA28N15_F109
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 33A TO-3P
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 52nC @ 10V
Max Input Capacitance 1600pF @ 25V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 227W (Tc)
Maximum Rds On at Id,Vgs 90 mOhm @ 16.5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-3PN
Dimension TO-3P-3, SC-65-3
Win Source Part Number 1039552-FQA28N15_F109
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FQA28N15_F109 CAD Model

Description

The MOSFET from Fairchild/ON Semiconductor is a high-performance N-Channel power MOSFET designed for use in various electronic devices.

  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current: 33A @ 25°C
  • Power Dissipation (Max): 227W (Tc)
  • Maximum Input Capacitance: 1600pF @ 25V
  • Package: TO-3PN
  • Mounting: Through-hole
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Maximum Gate-Source Voltage: ±25V
  • Maximum Rds On: 90 mOhm @ 16.5A, 10V
  • Applications: Power management and motor drive & control
  • Status: Obsolete (EOL)

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