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FQA8N100C

Part No FQA8N100C
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 8A TO-3P
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 1000V
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 70nC @ 10V
Max Input Capacitance 3220pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 225W (Tc)
Maximum Rds On at Id,Vgs 1.45 Ohm @ 4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3PN
Dimension TO-3P-3, SC-65-3
Win Source Part Number 1039570-FQA8N100C
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 450
Ultra Librarian 3D Model Ultra Librarian FQA8N100C CAD Model

Description

The FQA8N100C is an N-channel MOSFET from Fairchild/ON Semiconductor.

  • Power Dissipation (Max): 225W (Tc)
  • Drain-Source Breakdown Voltage: 1000V
  • Rds On (Max) @ Id, Vgs: 1.45 Ohm @ 4A, 10V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Gate Charge (Max): 70nC @ 10V
  • Input Capacitance (Max): 3220pF @ 25V
  • Package: TO-3PN
  • Mounting Type: Through Hole
  • Drive Voltage: 10V
  • Temperature Range: -55°C to 150°C (TJ)
  • Popularity: Medium
  • Supply and Demand Status: Sufficient
  • Package Quantity: 450

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $6.8819 $61.9371
21+ $5.6467 $118.5807
32+ $5.4702 $175.0464
44+ $5.2938 $232.9272
57+ $5.1173 $291.6861
76+ $4.5879 $348.6804
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 450 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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