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Same model may have multiple batches, images only for reference.
FQA90N10V2 Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQA90N10V2

Part No FQA90N10V2
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 105A TO-3P
Datasheet
FQA90N10V2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 105A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 191nC @ 10V
Max Input Capacitance 6150pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 330W (Tc)
Maximum Rds On at Id,Vgs 10 mOhm @ 52.5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Dimension TO-3P-3, SC-65-3
Win Source Part Number 1039574-FQA90N10V2
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FQA90N10V2 CAD Model

Description

The FQA90N10V2 is an N-channel MOSFET transistor manufactured by Fairchild/ON Semiconductor.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 105A @ 25°C
  • Maximum Rds on: 10 mOhm @ 52.5A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 191nC @ 10V
  • Maximum Input Capacitance: 6150pF @ 25V
  • Technology: MOSFET
  • Polarity: N-channel
  • Power Dissipation: 330W (Tc)
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Package: TO-3P
  • Dimensions: TO-3P-3, SC-65-3
  • Status: Obsolete (EOL)
  • Alternative Parts: IXFX180N10, STY140NS10, FQH140N10, and FQA90N10V2

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Quantity Unit Price Ext. Price
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21+ $5.6565 $118.7865
32+ $5.4797 $175.3504
44+ $5.3030 $233.3320
57+ $5.1261 $292.1877
76+ $4.5959 $349.2884
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