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Same model may have multiple batches, images only for reference.
IPP024N06N3G Infineon Technologies
Same model may have multiple batches, images only for reference.

IPP024N06N3G

Part No IPP024N06N3G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description POWER FIELD-EFFECT TRANSISTOR, 1 / N-Channel 60 V 120A (Tc) 250W (Tc) Through Hole PG-TO220-3-1
Sample
Rohs State Need to verify
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™ 3
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 196µA
Gate Charge (Qg) (Max) @ Vgs 275 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 23000 pF @ 30 V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 1352839-IPP024N06N3G
Ultra Librarian 3D Model Ultra Librarian IPP024N06N3G CAD Model

Description

The IPP024N06N3G is a single N-channel MOSFET transistor designed for discrete semiconductor applications. It operates over a wide temperature range of -55°C to 175°C, making it suitable for use in extreme conditions.

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™ 3
  • Package Type: TO-220-3
  • Mounting Type: Through Hole
  • Drain-to-Source Voltage: 60V
  • Continuous Drain Current: 120A @ 25°C
  • On-Resistance: 2.4mOhm @ 100A and 10V
  • Technology: N-Channel MOSFET
  • Protection Features: Current Limiting, Open Circuit, Over Load, Over Temperature, Over Voltage

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