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Same model may have multiple batches, images only for reference.
FQB10N50CFTM_WS Real Image
Same model may have multiple batches, images only for reference.

FQB10N50CFTM_WS

Part No FQB10N50CFTM_WS
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 10A DPAK / Trans MOSFET N-CH 500V 10A 3-Pin(2+Tab) D2PAK T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Series FRFET, QFET
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 500V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 60nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2210pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 143W (Tc)
Rds On (Maximum) @ Id, Vgs 610 mOhm @ 5A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package D2PAK (TO-263AB)
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 774709-FQB10N50CFTM_WS
Popularity Medium
Supply and Demand Status Limited
Family Name FQB10N50CF
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian FQB10N50CFTM_WS CAD Model

Description

The Fairchild/ON Semiconductor 774709-FQB10N50CFTM_WS is a medium popularity TO-263-3, D2Pak (2 Leads + Tab), TO-263AB MOSFET.

  • Channel Type: N
  • Drain Source Voltage: 500V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 2210pF @ 25V
  • Gate Charge (Qg) (Maximum) @ Vgs: 60nC @ 10V
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Maximum) @ Id: 4V @ 250μA
  • Power Dissipation (Maximum): 143W (Tc)
  • Rds On (Maximum) @ Id, Vgs: 610 mOhm @ 5A, 10V
  • Package: D2PAK (TO-263AB)
  • Introduction Date: May 23, 2016

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