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Same model may have multiple batches, images only for reference.
FQB25N33TM_F085 Real Image
Same model may have multiple batches, images only for reference.

FQB25N33TM_F085

Part No FQB25N33TM_F085
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 330V 25A D2PAK
Datasheet
FQB25N33TM_F085 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 330V
Continuous Drain Current at 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 75nC @ 15V
Max Input Capacitance 2010pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 3.1W (Ta), 250W (Tc)
Maximum Rds On at Id,Vgs 230 mOhm @ 12.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 115286-FQB25N33TM_F085
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQB25N33TM_F085 CAD Model

Description

The Fairchild/ON Semiconductor FQB25N33TM_F085 is an N-Channel MOSFET.

  • Drain-Source Breakdown Voltage: 330V
  • Continuous Drain Current: 25A (Tc) @ 25°C
  • Mounting: Surface Mount Device (SMD)
  • Package: D2PAK (TO-263AB)
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 75nC @ 15V
  • Maximum Rds On: 230 mOhm @ 12.5A, 10V
  • Maximum Input Capacitance: 2010pF @ 25V
  • Status: Not for New Designs

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202+ $1.7182 $347.0764
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