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FQB47P06TM_AM002 Real Image FQB47P06TM_AM002 Real Image
Same model may have multiple batches, images only for reference.
FQB47P06TM_AM002 Real Image FQB47P06TM_AM002 Real Image
FQB47P06TM_AM002 Real Image FQB47P06TM_AM002 Real Image
Same model may have multiple batches, images only for reference.

FQB47P06TM_AM002

Part No FQB47P06TM_AM002
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 47A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 3600pF @ 25V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 3.75W (Ta), 160W (Tc)
Maximum Rds On at Id,Vgs 26 mOhm @ 23.5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 130415-FQB47P06TM_AM002
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management, Motor Drive & Control, Audio
Ultra Librarian 3D Model Ultra Librarian FQB47P06TM_AM002 CAD Model

Description

The Fairchild/ON Semiconductor MOSFET is a high-quality electronic component used in various applications.

  • Power Dissipation: 3.75W (Ta), 160W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 47A (Tc)
  • Maximum Rds On: 26 mOhm @ 23.5A, 10V
  • Mounting: SMD (SMT)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±25V
  • Maximum Gate Charge: 110nC @ 10V
  • Package: D2PAK (TO-263AB)
  • Temperature Range: -55°C to 175°C (TJ)
  • Applications: Power management, motor drive & control, and audio

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181+ $1.9173 $347.0313
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