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FQB4N80TM

Part No FQB4N80TM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 3.9A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 880pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 3.13W (Ta), 130W (Tc)
Maximum Rds On at Id,Vgs 3.6 Ohm @ 1.95A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1039641-FQB4N80TM
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian FQB4N80TM CAD Model

Description

The Fairchild/ON Semiconductor 1039641-FQB4N80TM is an N-channel MOSFET with a maximum drain-source breakdown voltage of 800V and a continuous drain current of 3.9A @ 25°C.

  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 25nC @ 10V
  • Maximum Rds On: 3.6 Ohm @ 1.95A and 10V
  • Package: D2PAK (TO-263AB)
  • Packaging: reel packaging
  • Pieces per package: 800
  • Availability: in the open market
  • Supply and Demand Status: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.7735 $53.2050
70+ $1.4552 $101.8640
110+ $1.4097 $155.0670
150+ $1.3642 $204.6300
190+ $1.3187 $250.5530
255+ $1.1823 $301.4865
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,400 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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