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Same model may have multiple batches, images only for reference.
FQB5N20LTM Real Image
Same model may have multiple batches, images only for reference.

FQB5N20LTM

Part No FQB5N20LTM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 4.5A D2PAK
Datasheet
FQB5N20LTM Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 6.2nC @ 5V
Max Input Capacitance 325pF @ 25V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 3.13W (Ta), 52W (Tc)
Maximum Rds On at Id,Vgs 1.2 Ohm @ 2.25A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1039648-FQB5N20LTM
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQB5N20LTM CAD Model

Description

The Fairchild/ON Semiconductor FQB5N20LTM is a N-Channel MOSFET transistor that is designed for use in discrete semiconductor products.

  • Channel Type: N-Channel MOSFET
  • Power Dissipation: 3.13W (Ta), 52W (Tc)
  • Drain-Source Breakdown Voltage: 200V
  • Mounting: SMD (SMT)
  • Package: D2PAK (TO-263AB)
  • Status: Obsolete(EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Drive Voltage: 5V, 10V
  • Rds On @ Id,Vgs: 1.2 Ohm @ 2.25A, 10V
  • Gate-Source Voltage (Max): ±25V
  • Input Capacitance (Max): 325pF @ 25V
  • Supply and Demand Status: Balance

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