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FQB6N80TM

Part No FQB6N80TM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 5.8A D2PAK
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 31nC @ 10V
Max Input Capacitance 1500pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 3.13W (Ta), 158W (Tc)
Maximum Rds On at Id,Vgs 1.95 Ohm @ 2.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1039664-FQB6N80TM
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian FQB6N80TM CAD Model

Description

The Fairchild/ON Semiconductor FQB6N80TM is a MOSFET technology component with an N-channel polarity.

  • Technology: MOSFET
  • Polarity: N-channel
  • Case/Package: D2PAK (TO-263AB)
  • Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Drain-Source Breakdown Voltage: 800V
  • Continuous Drain Current: 5.8A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 31nC @ 10V
  • Maximum Input Capacitance: 1500pF @ 25V
  • Maximum Rds On at Id,Vgs: 1.95 Ohm @ 2.9A, 10V
  • Mounting: SMD (SMT)
  • Popularity: medium (41%)
  • Packaging: reel - TR
  • Quantity per Package: 800

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Pricing & Ordering

Quantity Unit Price Ext. Price
21+ $2.7899 $58.5879
51+ $2.2891 $116.7441
79+ $2.2176 $175.1904
108+ $2.1460 $231.7680
140+ $2.0745 $290.4300
187+ $1.8599 $347.8013
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,600 pieces
MOQ: 21 pcs
Order Increment : 1 pcs
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