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BC848B-7-F

Part No BC848B-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS NPN 30V 0.1A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 30V
Max Vce (sat) 600mV @ 5mA, 100mA
Collector Cut-off Current(Max) 15nA
Typical Gain (hFE) (Min) 200 @ 2mA, 5V
Maximum Power Dissipation 300mW
Frequency - Transition 300MHz
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Win Source Part Number 200459-BC848B-7-F
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name BC848B
Introduction Date February 09, 2001
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian BC848B-7-F CAD Model

Description

Product Overview: BC848B-7-F by Diodes Incorporated

The BC848B-7-F is a high-performance NPN bipolar junction transistor (BJT) from Diodes Incorporated, renowned for its efficiency and reliability in a wide range of electronic applications. This small signal transistor is designed for general-purpose and amplifier applications and is particularly well-suited for automated insertion due to its surface-mount SOT-23 package.

With its impressive electrical characteristics, the BC848B-7-F offers continuous collector current (Ic) of 100mA and a collector-base voltage (VCBO) of 30V, making it an excellent choice for switching and amplification purposes. Its collector-emitter voltage (VCEO) stands at 30V, which ensures stability and robustness in most electronic circuits.

The BC848B-7-F boasts a gain bandwidth product (fT) of 100MHz, allowing for efficient operation at high frequencies. This makes it suitable for RF applications and other high-speed signal processing tasks. Additionally, the device features a low collector-emitter saturation voltage, which reduces power loss and improves overall energy efficiency in your circuit designs.

One of the key advantages of the BC848B-7-F is its low noise figure, which is essential for applications that require high signal integrity. This characteristic is especially important in audio amplifiers, signal processing, and sensitive communication equipment where clarity and precision are paramount.

The device also features a high current gain (hFE) grouped range, which ensures consistent performance across various devices. This grouping facilitates easier design standardization and predictable circuit behavior, making the BC848B-7-F a reliable choice for mass production.

Diodes Incorporated has designed the BC848B-7-F with environmental sustainability in mind. This product is RoHS compliant, meaning it is free from hazardous substances such as lead, mercury, and cadmium. This compliance not only ensures the safety of users but also aligns with global efforts to reduce the environmental impact of electronic components.

In conclusion, the BC848B-7-F from Diodes Incorporated is a versatile, high-performance NPN transistor that offers excellent electrical characteristics for a variety of applications. Its efficiency, reliability, and compliance with environmental standards make it an ideal choice for designers and manufacturers seeking a component that delivers both quality and sustainability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
860+ $0.0583 $50.1380
2,095+ $0.0478 $100.1410
3,240+ $0.0463 $150.0120
4,465+ $0.0448 $200.0320
5,775+ $0.0433 $250.0575
7,715+ $0.0389 $300.1135
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,032 pieces
MOQ: 860 pcs
Order Increment : 1 pcs
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