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FQD12P10

Part No FQD12P10
Manufacturer Fairchild/ON Semiconductor
Description 100V P-Channel MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer Fairchild/ON Semiconductor
Win Source Part Number 1175292-FQD12P10
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQD12P10 CAD Model

Description

The FQD12P10 is a P-Channel MOSFET manufactured by Fairchild/ON Semiconductor. It's designed for use in power switching applications where a P-channel device is required, particularly in high-side switching configurations. It offers a low on-resistance and is suitable for various power management and control applications.

Applications:

  • Load Switching: Used to control power to various loads, especially in automotive applications.
  • High-Side Switching: Implemented in high-side switching configurations, where the load is connected to ground.
  • Power Management: Used in power management circuits for efficient power distribution.
  • Battery Management Systems (BMS): Used in BMS for charging and discharging control.
  • DC-DC Converters: Employed in DC-DC converters where a P-channel MOSFET simplifies the design.

Features:

  • P-Channel MOSFET: Suitable for high-side switching.
  • Low On-Resistance: Reduces conduction losses.
  • Fast Switching Speed: Minimizes switching losses.
  • Avalanche Ruggedness: Improves reliability under transient conditions.
  • TO-252 Package: Surface mount package for efficient thermal management.

Benefits:

  • High Efficiency: Low on-resistance and fast switching contribute to high efficiency.
  • Improved Reliability: Avalanche ruggedness enhances reliability.
  • Simplified Design: P-channel characteristics simplify certain circuit designs.
  • Reduced Heat Dissipation: Low on-resistance minimizes heat generation.
  • Improved System Performance: Fast switching speed improves transient response.

Additional Details:

The FQD12P10 has a drain-source voltage (VDS) of -100V and a continuous drain current (ID) of -8.7A. The gate-source voltage (VGS) is rated at ±20V. The device comes in a TO-252 (DPAK) package. Its fast switching characteristics are suitable for high-frequency switching applications. The device is lead-free and RoHS compliant. The low on-resistance of this MOSFET helps reduce power losses and heat generation, making it suitable for various power applications. The P-channel configuration makes it particularly useful in high-side switching scenarios. The avalanche ruggedness improves overall system reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
405+ $0.1432 $57.9960
985+ $0.1178 $116.0330
1,520+ $0.1143 $173.7360
2,085+ $0.1109 $231.2265
2,690+ $0.1074 $288.9060
3,615+ $0.0959 $346.6785
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 82,000 pieces
MOQ: 405 pcs
Order Increment : 1 pcs
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