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Same model may have multiple batches, images only for reference.
FQD18N20V2TM Real Image
Same model may have multiple batches, images only for reference.

FQD18N20V2TM

Part No FQD18N20V2TM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 15A DPAK
Datasheet
FQD18N20V2TM Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 26nC @ 10V
Max Input Capacitance 1080pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 83W (Tc)
Maximum Rds On at Id,Vgs 140 mOhm @ 7.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 092644-FQD18N20V2TM
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FQD18N20V2TM CAD Model

Description

The Fairchild/ON Semiconductor FQD18N20V2TM is an N-Channel MOSFET with the following properties:

  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current @ 25°C: 15A
  • Maximum Rds On: 140 mOhm @ 7.5A, 10V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 26nC @ 10V
  • Maximum Input Capacitance: 1080pF @ 25V
  • Operating Temperature: -55°C to 150°C (TJ)
  • Package: D-Pak (TO-252-3, DPak (2 Leads + Tab), SC-63)
  • Popularity: High
  • Supply and Demand: Balanced
  • Quantity per Package: 2,500

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9433 $51.8815
115+ $0.8836 $101.6140
180+ $0.8538 $153.6840
255+ $0.7941 $202.4955
330+ $0.7642 $252.1860
410+ $0.7344 $301.1040
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