The FQD19N10LTM is an N-Channel MOSFET transistor manufactured by Fairchild/ON Semiconductor. Key features include:

• Packaging: Reel
• Mounting: SMD (SMT)
• Maximum Power Dissipation: 2.5W (Ta), 50W (Tc)
• Drain-Source Breakdown Voltage: 100V
• Continuous Drain Current (Tc) @ 25°C: 15.6A
• Maximum Gate-Source Voltage: ±20V
• Maximum Rds On: 100 mOhm @ 7.8A, 10V
• Gate-Source Threshold Voltage: 2V @ 250μA
• Maximum Gate Charge: 18nC @ 5V
• Maximum Input Capacitance: 870pF @ 25V
• Drive Voltage: 5V, 10V
• Operating Temperature: -55°C to 150°C (TJ)
• Package: D-Pak (TO-252-3, DPak (2 Leads + Tab), SC-63)