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Same model may have multiple batches, images only for reference.
FQD1N50TF Real Image
Same model may have multiple batches, images only for reference.

FQD1N50TF

Part No FQD1N50TF
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 1.1A DPAK / Trans MOSFET N-CH 500V 1.1A 3-Pin(2+Tab) DPAK T/R
Datasheet
FQD1N50TF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Series QFET
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 500V
Current - Continuous Drain (Id) @ 25°C 1.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 5.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 150pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 2.5W (Ta), 25W (Tc)
Rds On (Maximum) @ Id, Vgs 9 Ohm @ 550mA, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package D-Pak
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 774730-FQD1N50TF
Popularity Medium
Supply and Demand Status Limited
Family Name FQD1N50
Introduction Date April 01, 2000
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian FQD1N50TF CAD Model

Description

The Fairchild/ON Semiconductor FQD1N50TF is a MOSFET transistor with a maximum drain-source voltage of 500V and a continuous drain current of 1.1A.

  • Gate-Source Threshold Voltage: 5V
  • Gate Charge: 5.5nC
  • Maximum Power Dissipation: 2.5W
  • Package: TO-252-3, DPak
  • Mounting: Surface Mount
  • Series: QFET
  • Category: Discrete Semiconductor Products
  • Supply and Demand Status: Limited

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