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Same model may have multiple batches, images only for reference.
IPI60R250CPAKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPI60R250CPAKSA1

Part No IPI60R250CPAKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 12A TO-262 / Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-262 Tube
Datasheet
IPI60R250CPAKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series CoolMOS
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 650V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 3.5V @ 440μA
Gate Charge (Qg) (Maximum) @ Vgs 35nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1200pF @ 100V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 104W (Tc)
Rds On (Maximum) @ Id, Vgs 250 mOhm @ 7.8A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package PG-TO262-3
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 776883-IPI60R250CPAKSA1
Popularity Medium
Supply and Demand Status Balance
Family Name IPI60R250CP
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Not Applicable
Ultra Librarian 3D Model Ultra Librarian IPI60R250CPAKSA1 CAD Model

Description

The Infineon Technologies CoolMOS series MOSFET is a high-performance electronic component that is designed for use in discrete semiconductor products.

  • Continuous Drain Current: 12A
  • Maximum Drain-Source Voltage: 650V
  • Drive Voltage: 10V
  • Maximum Power Dissipation: 104W
  • Mounting Application: through-hole
  • Halogen-free: Yes
  • ECCN Regulations Compliance: Yes
  • Status: Obsolete (EOL)

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