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FQD2N50TF

Part No FQD2N50TF
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 1.6A DPAK / Trans MOSFET N-CH 500V 1.6A 3-Pin(2+Tab) DPAK T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Series QFET
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 500V
Current - Continuous Drain (Id) @ 25°C 1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 8nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 230pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 2.5W (Ta), 30W (Tc)
Rds On (Maximum) @ Id, Vgs 5.3 Ohm @ 800mA, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package D-Pak
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 774731-FQD2N50TF
Popularity Medium
Supply and Demand Status Balance
Family Name FQD2N50
Introduction Date May 16, 2000
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian FQD2N50TF CAD Model

Description

The Fairchild/ON Semiconductor FQD2N50TF is a type of MOSFET that is a discrete semiconductor product.

  • Series: QFET
  • Mounting Type: SMD
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
  • Power Dissipation (Maximum): 2.5W (Ta), 30W (Tc)
  • Rds On (Maximum) @ Id, Vgs: 5.3 Ohm @ 800mA, 10V
  • Introduction Date: May 16, 2000
  • Status: Obsolete (EOL)
  • Cross-Reference: STD2N50, STD2N50T4, RDD023N50TL, RDD022N50TL
  • Popularity: Medium
  • Supply and Demand: Balanced

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