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Same model may have multiple batches, images only for reference.
FQD2N60CTM Real Image
Same model may have multiple batches, images only for reference.

FQD2N60CTM

Part No FQD2N60CTM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 1.9A DPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 235pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 44W (Tc)
Maximum Rds On at Id,Vgs 4.7 Ohm @ 950mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 016432-FQD2N60CTM
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FQD2N60CTM CAD Model

Description

The Fairchild/ON Semiconductor FQD2N60CTM is a high-performance N-channel MOSFET designed for use in a wide range of applications.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 1.9A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 12nC @ 10V
  • Maximum Input Capacitance: 235pF @ 25V
  • Category: Discrete Semiconductor Products
  • Popularity: Medium
  • Package Quantity: 2,500 units

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Pricing & Ordering

Quantity Unit Price Ext. Price
160+ $0.3184 $50.9440
340+ $0.2983 $101.4220
525+ $0.2882 $151.3050
750+ $0.2680 $201.0000
970+ $0.2580 $250.2600
1,215+ $0.2479 $301.1985
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 45,000 pieces
MOQ: 160 pcs
Order Increment : 1 pcs
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