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Same model may have multiple batches, images only for reference.
FQD3P50TF Real Image
Same model may have multiple batches, images only for reference.

FQD3P50TF

Part No FQD3P50TF
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 500V 2.1A DPAK
Datasheet
FQD3P50TF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 2.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 23nC @ 10V
Max Input Capacitance 660pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 50W (Tc)
Maximum Rds On at Id,Vgs 4.9 Ohm @ 1.05A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1039743-FQD3P50TF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQD3P50TF CAD Model

Description

The Fairchild/ON Semiconductor 1039743-FQD3P50TF is a MOSFET that belongs to the discrete semiconductor products category of electronic components.

  • Polarity: P-Channel
  • Power Dissipation: 2.5W (Ta), 50W (Tc)
  • Gate Charge: 23nC @ 10V
  • Input Capacitance: 660pF @ 25V
  • Gate-Source Voltage: ±30V
  • Rds On: 4.9 Ohm @ 1.05A, 10V

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