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Same model may have multiple batches, images only for reference.
FQD4P25TM_WS Real Image
Same model may have multiple batches, images only for reference.

FQD4P25TM_WS

Part No FQD4P25TM_WS
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 250V 3.1A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 14nC @ 10V
Max Input Capacitance 420pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 45W (Tc)
Maximum Rds On at Id,Vgs 2.1 Ohm @ 1.55A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 100472-FQD4P25TM_WS
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FQD4P25TM_WS CAD Model

Description

The Fairchild/ON Semiconductor FQD4P25TM_WS is a P-channel MOSFET transistor.

  • Channel Type: P-Channel MOSFET
  • Drain-Source Breakdown Voltage: 250V
  • Continuous Drain Current: 3.1A @ 25°C
  • Rds On (Max): 2.1 Ohm @ 1.55A, 10V
  • Power Dissipation: 2.5W (Ta), 45W (Tc)
  • Drive Voltage: 10V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Gate Charge: 14nC @ 10V
  • Maximum Input Capacitance: 420pF @ 25V
  • Popularity: Medium
  • Supply and Demand: Sufficient

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16+ $9.4632 $151.4112
23+ $8.8015 $202.4345
30+ $8.4706 $254.1180
37+ $8.1397 $301.1689
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