The FQD5P10 is a P-Channel QFET® MOSFET from Fairchild Semiconductor (now ON Semiconductor). It utilizes advanced planar stripe and DMOS technology. This is designed to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Applications

• Power supplies
• Motor control
• DC-DC converters
• Load switching

Features

• Low on-resistance (RDS(on))
• Low gate charge (Qg)
• High avalanche energy capability
• High ruggedness
• Fast switching

Benefits

• Increased energy efficiency in power conversion applications.
• Reduced switching losses.
• Improved system reliability due to high avalanche energy capability and ruggedness.
• Higher power density.

Additional Details

The FQD5P10 specifications include a drain-source voltage (VDS) of -100V, a continuous drain current (ID) of -5A, and an RDS(on) of typically 0.8 Ohms. The device is typically available in a TO-251 or TO-252 package. The QFET® technology ensures a robust and reliable performance under various operating conditions.