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FQI16N25CTU

Part No FQI16N25CTU
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 15.6A I2PAK  /  N-Channel 250 V 15.6A (Tc) 3.13W (Ta), 139W (Tc) Through Hole I2PAK (TO-262)
Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Fairchild Semiconductor
Series QFET®
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 15.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 270mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 53.5 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1080 pF @ 25 V
Power Dissipation (Max) 3.13W (Ta), 139W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
ECCN EAR99
HTSUS 8541.29.0095
Other Names 2156-FQI16N25CTU-FS,FAIFSCFQI16N25CTU
Standard Package 50
Win Source Part Number 1164539-FQI16N25CTU
Ultra Librarian 3D Model Ultra Librarian FQI16N25CTU CAD Model

Description

The QFET from Fairchild Semiconductor is a N-channel MOSFET transistor.

  • Drain to Source Voltage: 250V
  • Continuous Drain Current: 15.6A @ 25°C
  • Maximum Rds On: 270mOhm @ 7.8A and 10V
  • Gate Charge: 53.5nC @ 10V
  • Input Capacitance: 1080pF @ 25Vds
  • Mounting: Through-hole
  • RoHS: Compliant
  • Temperature Range: -55°C to 150°C

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