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Same model may have multiple batches, images only for reference.
FQI17P06TU Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQI17P06TU

Part No FQI17P06TU
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 17A I2PAK
Datasheet
FQI17P06TU Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 900pF @ 25V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 3.75W (Ta), 79W (Tc)
Maximum Rds On at Id,Vgs 120 mOhm @ 8.5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I2PAK
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 040340-FQI17P06TU
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQI17P06TU CAD Model

Description

The FQI17P06TU manufactured by Fairchild/ON Semiconductor is a MOSFET technology based product with P-Channel polarity and I2PAK case/package.

  • Maximum Continuous Drain Current: 17A (Tc) at 25°C
  • Maximum Gate-Source Voltage: ±25V

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